Determination of device structure from GaAs/AlGaAs HEMT DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic curves
A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, space...
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| Published in: | IEEE transactions on electron devices Vol. 39; no. 5; pp. 1041 - 1049 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-05-1992
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| Online Access: | Get full text |
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| Summary: | A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity, in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.129080 |