Increased Formation of Trions and Charged Biexcitons by Above-Gap Excitation in Single-layer WSe2

• Published in: ACS nano Vol. 18; no. 47; p. 32973
• Main Authors: Strasbourg, Matthew C, Yanev, Emanuil S, Parvez, Sheikh, Afrin, Sajia, Johns, Cory, Noble, Zoe, Darlington, Thomas P, Grumstrup, Erik M, Hone, James C, Schuck, P James, Borys, Nicholas J
• Format: Journal Article
• Language: English
• Published: 26-11-2024
• ISSN: 1936-086X; 1936-086X
• DOI: 10.1021/acsnano.4c13208

Two-dimensional semiconductors exhibit pronounced many-body effects and intense optical responses due to strong Coulombic interactions. Consequently, subtle differences in photoexcitation conditions can strongly influence how the material dissipates energy during thermalization. Here, using multiple excitation spectroscopies, we show that a distinct thermalization pathway emerges at elevated excitation energies, enhancing the formation of trions and charged biexcitons in single-layer WSe2 by up to 2× and 5× , respectively. Power- and temperature-dependent measurements lend insights into the origin of the enhancement. These observations underscore the complexity of excited state relaxation in monolayer semiconductors, provide insights for the continued development of carrier thermalization models, and highlight the potential to precisely control excitonic yields and probe nonequilibrium dynamics in 2D semiconductors.Two-dimensional semiconductors exhibit pronounced many-body effects and intense optical responses due to strong Coulombic interactions. Consequently, subtle differences in photoexcitation conditions can strongly influence how the material dissipates energy during thermalization. Here, using multiple excitation spectroscopies, we show that a distinct thermalization pathway emerges at elevated excitation energies, enhancing the formation of trions and charged biexcitons in single-layer WSe2 by up to 2× and 5× , respectively. Power- and temperature-dependent measurements lend insights into the origin of the enhancement. These observations underscore the complexity of excited state relaxation in monolayer semiconductors, provide insights for the continued development of carrier thermalization models, and highlight the potential to precisely control excitonic yields and probe nonequilibrium dynamics in 2D semiconductors.