Large-signal analysis of MOS varactors in CMOS -G/m/ LC VCOs
MOS varactors are used extensively as tunable elements in the tank circuits of RF voltage-controlled oscillators (VCOs) based on submicrometer CMOS technologies. MOS varactor topologies include conventional D = S = B connected, inversion-mode (I-MOS), and accumulation-mode (A-MOS) structures. When i...
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| Published in: | IEEE journal of solid-state circuits Vol. 38; no. 8; pp. 1325 - 1332 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-08-2003
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| Online Access: | Get full text |
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| Abstract | MOS varactors are used extensively as tunable elements in the tank circuits of RF voltage-controlled oscillators (VCOs) based on submicrometer CMOS technologies. MOS varactor topologies include conventional D = S = B connected, inversion-mode (I-MOS), and accumulation-mode (A-MOS) structures. When incorporated into the VCO tank circuit, the large-signal swing of the VCO output oscillation modulates the varactor capacitance in time, resulting in a VCO tuning curve that deviates from the dc tuning curve of the particular varactor structure. This paper presents a detailed analysis of this large-signal effect. Simulated results are compared to measurements for an example 2.5-GHz complementary -G/m/ LC VCO using I-MOS varactors implemented in 0.35-mum CMOS technology. |
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| AbstractList | MOS varactors are used extensively as tunable elements in the tank circuits of RF voltage-controlled oscillators (VCOs) based on submicrometer CMOS technologies. MOS varactor topologies include conventional D = S = B connected, inversion-mode (I-MOS), and accumulation-mode (A-MOS) structures. When incorporated into the VCO tank circuit, the large-signal swing of the VCO output oscillation modulates the varactor capacitance in time, resulting in a VCO tuning curve that deviates from the dc tuning curve of the particular varactor structure. This paper presents a detailed analysis of this large-signal effect. Simulated results are compared to measurements for an example 2.5-GHz complementary -G/m/ LC VCO using I-MOS varactors implemented in 0.35-mum CMOS technology. |
| Author | Bunch, R L Raman, S |
| Author_xml | – sequence: 1 givenname: R surname: Bunch middlename: L fullname: Bunch, R L – sequence: 2 givenname: S surname: Raman fullname: Raman, S |
| BookMark | eNqFjz1PwzAYhD0UibawM3pic_L6I64tsSALWlBQhlSs1etgV0FpUuIWiX9PEOwsd7pHp5NuQWb90AdCbjhknIPNn-vaZQJAZoYrxfWMzAG4YXZil2SR0vsUlTJ8Tu5KHPeBpXbfY0dxkq_UJjpE-lLV9BNHbE7DmGjbU_dD2Do_5LR09NVV6YpcROxSuP7zJdk-PmzdhpXV-sndl-yoBTBR8AgKvbeAXsbAvQHhYyhMo5RsbAFBAqKBN4MiaEAw2sSw8mD8Skkvl-T2d_Y4Dh_nkE67Q5ua0HXYh-GcdsJYLux09_-i1CtptPwGQCVV2Q |
| ContentType | Journal Article |
| DBID | 7SP 8FD L7M 7U5 |
| DOI | 10.1109/JSSC.2003.814416 |
| DatabaseName | Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace Solid State and Superconductivity Abstracts |
| DatabaseTitle | Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Solid State and Superconductivity Abstracts |
| DatabaseTitleList | Technology Research Database Technology Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EndPage | 1332 |
| GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 5GY 6IK 7SP 8FD AAJGR ABQJQ ACGFS ACIWK ACNCT AENEX AIBXA ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IFIPE IPLJI JAVBF L7M LAI M43 O9- OCL P2P PZZ RIA RIE RIG RNS TAE TN5 UKR 7U5 |
| ID | FETCH-LOGICAL-p620-251f04abb90ab3fe1b802bfe58c443c950e30aa80d8a2e60a0868fe7b08b743b3 |
| ISSN | 0018-9200 |
| IngestDate | Fri Aug 16 12:15:53 EDT 2024 Sat Aug 17 00:17:33 EDT 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 8 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-p620-251f04abb90ab3fe1b802bfe58c443c950e30aa80d8a2e60a0868fe7b08b743b3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 28367386 |
| PQPubID | 23500 |
| PageCount | 8 |
| ParticipantIDs | proquest_miscellaneous_28912900 proquest_miscellaneous_28367386 |
| PublicationCentury | 2000 |
| PublicationDate | 20030801 |
| PublicationDateYYYYMMDD | 2003-08-01 |
| PublicationDate_xml | – month: 08 year: 2003 text: 20030801 day: 01 |
| PublicationDecade | 2000 |
| PublicationTitle | IEEE journal of solid-state circuits |
| PublicationYear | 2003 |
| SSID | ssj0014481 |
| Score | 1.7449126 |
| Snippet | MOS varactors are used extensively as tunable elements in the tank circuits of RF voltage-controlled oscillators (VCOs) based on submicrometer CMOS... |
| SourceID | proquest |
| SourceType | Aggregation Database |
| StartPage | 1325 |
| Title | Large-signal analysis of MOS varactors in CMOS -G/m/ LC VCOs |
| URI | https://search.proquest.com/docview/28367386 https://search.proquest.com/docview/28912900 |
| Volume | 38 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV05T8MwFLY4FhgQp7jxwBaZujkaW2JBoYBQaCUaEFtlJ7aUoSmilN_Ps9smASqOgcWKniLH0We9y37fQ-gUPNiWAktAVNO0MAMjRrhQAYEgLmOpm_JM29YJvbDzxC7bfrvqT1jJ_hVpkAHWpnL2D2iXk4IAngFzGAF1GH-Fe2yudhNzLcOyAFSUI3fdnvNm2ZlNfx1T7Gck5Bo-NTDc5XHkPEbdUd1bNZFgnVsCVp5nxNYgOWn-ko7z1yrLDgbSpmjunTKffC8-5FdnyQWvvNpWKswm6MMJmWipMD1W2xispv0gsg1qlhTCX3e-lrYkp7e9XmQJWc-YiermEGJ3uv2rhzjuJ-2nZBEtu6BLpiV65UERRJeTpojTdc5OoilvfJ7_i7W1LkSyjtamvj--mIC2gRZUsYlWa4yQW-i8Dh-ewYeHGgNYuIQP5wU28GFy3Rg0cBxhA902Sq7aSXRDpg0uyHMLonZwLTX1hZScCulp1ZSMulKrgKW-76U8oMqjQjCaMeGqFhUQfjKtQkmZBMdPejtoqRgWahfhUGqutcy45oHtJ95MhZepIEyVL8HJ20Mns3_vg_4wh0KiUMPxqA_upW38-t0b3CQr6f6PcxyglWoTHaKl15exOkKLo2x8bFF7B-UyPT0 |
| link.rule.ids | 315,782,786,27933,27934 |
| linkProvider | IEEE |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Large-signal+analysis+of+MOS+varactors+in+CMOS+-G%2Fm%2F+LC+VCOs&rft.jtitle=IEEE+journal+of+solid-state+circuits&rft.au=Bunch%2C+R+L&rft.au=Raman%2C+S&rft.date=2003-08-01&rft.issn=0018-9200&rft.volume=38&rft.issue=8&rft.spage=1325&rft.epage=1332&rft_id=info:doi/10.1109%2FJSSC.2003.814416&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9200&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9200&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9200&client=summon |