20-40 Gb/s 0.2- mu m GaAs HEMT chip set for optical data receiver

20-40 Gb/s 0.2- mu m GaAs HEMT chip set for optical data receiver

Using our 0.2-mum AlGaAs-GaAs-AlGaAs quantum well high electron mobility transistor (HEMT) technology, we have developed a chip set for 20-40 Gb/s fiber-optical digital transmission systems. In this paper we describe five receiver chips: a limiting amplifier with a differential gain of 17 dB and a 3...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits Vol. 32; no. 9; pp. 1384 - 1393
Main Authors: Lang, M, Wang, Zhi-Gong, Lao, Zhihao, Schlechtweg, N, Thiede, A, Rieger-Motzer, M, Sedler, N, Bronner, W, Kaufel, G, Kohler, K, Hulsmann, A, Raynor, B
Format: Journal Article
Language:English
Published: 01-09-1997
Online Access:Get full text
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Summary:Using our 0.2-mum AlGaAs-GaAs-AlGaAs quantum well high electron mobility transistor (HEMT) technology, we have developed a chip set for 20-40 Gb/s fiber-optical digital transmission systems. In this paper we describe five receiver chips: a limiting amplifier with a differential gain of 17 dB and a 3 dB bandwidth of 29.3 GHz, a 40 Gb/s clock recovery, a data decision and a 1:4 demultiplexer, both for bit rates of more than 40 Gb/s, and a static 1:4 divider with operating frequencies up to 30 GHz. All presented chips were characterized on wafer with 50-Omicron coplanar test probes
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ISSN:0018-9200
DOI:10.1109/4.628745