Low threshold, high T0 InGaAsP/InP 1.3μm lasers grown on p-type InP substrates

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Bibliographic Details
Published in:	Applied physics letters Vol. 49; no. 7; pp. 400 - 402
Main Authors:	HASENBERG, T. C, GARMIRE, E
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 18-08-1986
Subjects:	Applied sciences Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Other techniques and industries Physics Semiconductor lasers; laser diodes Gallium Indium Arsenides phosphides Mixed Indium Phosphides Semiconductor laser
Online Access:	Get full text
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Description
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.97600