Fluorescence EXAFS study on local structures around Eu atoms implanted in AlxGa1-xN

• Published in: Physica. B, Condensed matter Vol. 376-377; pp. 496 - 498
• Main Authors: Ofuchi, H, Nishiwaki, T, Takaba, K, Ogawa, K, Tabuchi, M, Takeda, Y, Wakahara, A, Yoshida, A, Ohshima, T, Ito, H
• Format: Journal Article
• Language: English
• Published: 01-04-2006
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.12.126

We have investigated Eu-implanted AlxGa1-xN by fluorescence extended X-ray absorption fine structure (EXAFS) measurements to elucidate the relationship between the local structures around the Eu atoms and the luminescence. The EXAFS analysis has revealed that the majority of Eu atoms in the GaN film substitute the group-III sites but deviate as much as from the equilibrium site. It was concluded that this deviation gives as asymmetric crystal field around Eu atoms and the addition of Al atoms enhances the asymmetry further. This explains the Al composition dependency on the Cathodeluminescence intensity.