GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence

GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence

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Bibliographic Details
Main Authors: RATTUNDE, M, SCHMITZ, J, KAUFEL, G, WAGNER, J
Format: Conference Proceeding
Language:English
Published: Piscataway NJ IEEE 2004
Subjects:
Applied sciences
Beam characteristics: profile, intensity, and power; spatial pattern formation
Diodes
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser optical systems: design and operation
Lasers
Optics
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers; laser diodes
Beam profiles
Quantum well lasers
Diode
Semiconductor laser
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Description
ISBN:0780385578
9780780385573