EFFECT OF 8 MeV ELECTRON IRRADIATION ON ELECTRICAL PROPERTIES OF CuInSe2 THIN FILMS

EFFECT OF 8 MeV ELECTRON IRRADIATION ON ELECTRICAL PROPERTIES OF CuInSe2 THIN FILMS

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3x1016 cm-3, were epitaxially grown on a GaAs(001) substrate by RF diode sputtering. No significant change...

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Bibliographic Details
Published in:Solar energy materials and solar cells Vol. 75; no. 1-2; pp. 115 - 120
Main Authors: Tanaka, T, Yamaguchi, T, Wakahara, A, Yoshida, A, Taniguchi, R, Matsuda, Y, Fujishiro, M
Format: Journal Article
Language:English
Published: 01-01-2003
Online Access:Get full text
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Summary:Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe2 thin films have been investigated. The n-type CuInSe2 films in which the carrier concentration was about 3x1016 cm-3, were epitaxially grown on a GaAs(001) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence < 3x1016 ecm-2. As the electron fluence exceeded 1017 ecm-2, both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm-1, which is lower than that of III-V compound materials. 14 refs.
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ISSN:0927-0248
DOI:10.1016/S0927-0248(02)00117-4