Magnetoresistance of amorphous MoxGe1-x near the metal-insulator transition

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Bibliographic Details
Published in:	Physical review. B, Condensed matter Vol. 37; no. 12; pp. 7094 - 7097
Main Authors:	YOSHIZUMI, S, GEBALLE, T. H, KUNCHUR, M, MCLEAN, W. L
Format:	Journal Article
Language:	English
Published:	Woodbury, NY American Physical Society 15-04-1988 American Institute of Physics
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Electronic conduction in metals and alloys Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Materials science Metals, semimetals and alloys Physics Specific materials Metal insulator transition Electrical conductivity Magnetoconductivity Very low temperature Amorphous alloy Chemical composition Magnetoresistance Magnetic field
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Description
ISSN:	0163-1829 1095-3795
DOI:	10.1103/PhysRevB.37.7094