Titanium silicide formation in TiSi2/TiB2 bilayer barrier structure

Titanium silicide formation in TiSi2/TiB2 bilayer barrier structure

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Bibliographic Details
Published in:Microelectronic engineering Vol. 33; no. 1-4; pp. 317 - 323
Main Authors: SADE, G, PELLEG, J, EZERSKY, V
Format: Conference Proceeding
Language:English
Published: Amsterdam Elsevier Science 1997
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Characterization
Potential barrier
Titanium Silicides
Electrical properties
Interconnection
Integrated circuit
Interface
Sputtering
Thin film
Online Access:Get full text
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Description
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(96)00060-3