Optimized NH3 annealing Process for high-quality HfSiON gate oxide

Optimized NH3 annealing Process for high-quality HfSiON gate oxide

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Bibliographic Details
Published in:IEEE electron device letters Vol. 25; no. 7; p. 465
Main Authors: Akbar, M.S, Cho, H.-J, Choi, R, Kang, C.S, Kang, C.Y, Choi, C.H, Rhee, S.J, Kim, Y.H, Lee, J.C
Format: Journal Article
Language:English
Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-07-2004
Online Access:Get full text
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Description
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.830270