The evolution of the structure of quantum size effect Pb nanocrystals on Si(111) 7 x 7

• Published in: Physica. B, Condensed matter Vol. 357; no. 1-2; pp. 175 - 179
• Main Authors: FENG, R, CONRAD, E. H, KIM, C, MICELI, P. F, TRINGIDES, M. C
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 28-02-2005
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics; Data analysis; Wetting; Quantum wells; Roughness; Surface X-ray scattering; Diffuse scattering; Quantum size effect; Scanning tunneling microscopy; X-ray scattering; Stress relaxation; Nanocrystals; Strained layer; Growth mechanism; Silicon; LEED; Surface layers; Island structure; Nanocrystal
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2004.11.051

We have carried out diffuse X-ray scattering measurements of the growth of Pb nanocrystalline islands on Si(1 1 1). Analysis of our data shows that islands growing on an initially rough wetting layer transforms the portion of the wetting layer below them into ordered fcc sites. Therefore, the islands grow directly on top of the Si surface with a disordered wetting layer occupying the region between the islands and, consequently, the island height responsible for the quantum well depth is one layer thicker than reported by LEED and STM. These islands have an extremely good vertical order until the islands coalesce into a closed film. At that point the disorder of the film increases consistent with misfit strain relaxation.