Luminescence properties of p-type thin CdS films prepared by laser ablation

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 35; no. 1-3; pp. 117 - 119
• Main Authors: ULLRICH, B, EZUMI, H, KEITOKU, S, KOBAYASHI, T
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01-12-1995
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Thin films; Optical properties; Cadmium sulfides; Doping; Luminescence; P-type conductors; Experimental study; Laser assisted process
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/0921-5107(95)01404-7

Investigations of the luminescence of p-type CdS:Cu thin (less than or equal to 2 mu m) films on glass substrate prepared by laser ablation were performed for the first time. The dependences of the luminescence on the Cu content in the thin films were studied at 300K with argon laser lines at 457.9nm, 488.0nm and 514.5nm. It is demonstrated that the luminescence excited with the 514.5nm line corresponds to the donor-acceptor transition. Furthermore, it is shown that the intensity of the red emission of CdS:Cu films can be efficiently bleached by Cu doping.