$Effect of Al mole fraction on electron emission at the AlxGa1-xAs/GaAs interface$
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Effect of Al mole fraction on electron emission at the AlxGa1-xAs/GaAs interface

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Bibliographic Details
Published in:	Applied physics letters Vol. 55; no. 16; pp. 1656 - 1658
Main Authors:	KLEINE, J. S, MELLOCH, M. R, COOPER, J. A. JR
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 16-10-1989
Subjects:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Gallium Arsenides Measurement Storage time Aluminium Gallium Arsenides Mixed III-V compound Inversion layer Heterojunction
Online Access:	Get full text
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ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102229