Small-signal performance and modeling of sub-50 nm nMOSFETs with fT above 460-GHz

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Bibliographic Details
Published in:	Solid-state electronics Vol. 52; no. 6; pp. 899 - 908
Main Authors:	DIMITROV, V, HENG, J. B, KORNBLIT, A, KLEMENS, F, BOWER, J, CIRELLI, R, FERRY, E. J, TAYLOR, A, FENG, M, TIMP, G, TIMP, K, DIMAURO, O, CHAN, R, HAFEZ, M, FENG, J, SORSCH, T, MANSFIELD, W, MINER, J
Format:	Journal Article
Language:	English
Published:	Oxford Elsevier Science 01-06-2008
Subjects:	Applied sciences Electronics Exact sciences and technology Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Performance evaluation Noise figure MOSFET Small signal behavior RF MOSFET modeling Mixed signal circuit Microwave Centimetric wave Radiofrequency Modeling Nanoelectronics Cut off frequency Radio frequency (RF) MOSFET s parameter Mixed signal Silicon High frequency NMOS technology
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ISSN:	0038-1101 1879-2405
DOI:	10.1016/j.sse.2008.01.025