Improvement of SiO2/Si interface properties utilising fluorine ion implantation and drive-in diffusion

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Bibliographic Details
Published in:	Japanese journal of applied physics Vol. 28; no. 6; pp. 1041 - 1045
Main Authors:	OHYU, K, ITOGA, T, NISHIOKA, Y, NATSUAKI, N
Format:	Journal Article
Language:	English
Published:	Tokyo Japanese journal of applied physics 1989
Subjects:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Electric contact Silicon Semiconductor oxide contact
Online Access:	Get full text
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Description
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.28.1041