Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

• Published in: Electronic materials letters Vol. 12; no. 2; pp. 232 - 236
• Main Authors: Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01-03-2016; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; 전자/정보통신공학; PA-MBE; FP emission; FN tunnelling; HEMT; reverse bias leakage current
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-015-5249-9

The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level.