Epitaxial growth of Ba1-xKxBiO3 thin films by high-pressure reactive RF-magnetron sputtering

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Bibliographic Details
Published in:	Japanese journal of applied physics Vol. 30; no. 8B; pp. L1480 - L1482
Main Authors:	TAKAHASHI, K, IYORI, M, KAMINO, M, USUKI, T, YOSHISATO, Y, NAKANO, S
Format:	Journal Article
Language:	English
Published:	Tokyo Japanese journal of applied physics 15-08-1991
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Barium Bismuth Potassium Oxides Mixed Crystal growth Substrate Reflection high energy electron diffraction Epitaxy Reactive sputtering Strontium Titanium Oxides Mixed X ray diffraction Preferred orientation Thin film
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Description
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.30.L1480