Drastic power factor improvement by Te doping of rare earth-free CoSb3-skutterudite thin films

• Published in: RSC advances Vol. 10; no. 36; pp. 21129 - 21135
• Main Authors: Bourgès, Cédric, Sato, Naoki, Baba, Takahiro, Baba, Tetsuya, Ohkubo, Isao, Tsujii, Naohito, Mori, Takao
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 03-06-2020; The Royal Society of Chemistry
• Subjects: Carrier mobility; Chemistry; Doping; Electrical resistivity; Industrial development; Magnetron sputtering; Power factor; Room temperature; Seebeck effect; Stoichiometry; Tellurium; Thin films; Transport properties
• ISSN: 2046-2069
• DOI: 10.1039/d0ra02699a

In the present study, we have focused on the elaboration of control of Te-doped CoSb3 thin films by RF magnetron sputtering which is an attractive technique for industrial development of thermoelectric (TE) thin films. We have successfully synthesized sputtering targets with a reliable approach in order to obtain high-quality films with controlled stoichiometry. TE properties were then probed and revealed a reliable n-type behavior characterized by poor electrical transport properties. Tellurium substitution was realized by co-sputtering deposition and allowed obtaining a significant enhancement of the power factor with promising values of PF ≈ 0.21 mW m−1 K−2 near room temperature. It is related to the Te doping effect which leads to an increase of the Seebeck coefficient and the electrical conductivity simultaneously. However, despite this large improvement, the properties remained far from the bulk material and further developments are necessary to improve the carrier mobility reduced by the thin film formatting.