Observation of pn junctions on implanted silicon using a scanning tunneling microscope

• Published in: Applied physics letters Vol. 53; no. 6; pp. 487 - 489
• Main Authors: HOSAKA, S, HOSOKI, S, TAKATA, K, HORIUCHI, K, NATSUAKI, N
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 08-08-1988
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ion implantation; Prototype; Instrumentation; Scanning tunneling microscopy; Microelectronic fabrication; Corrugated surface; Morphology; Topography; Quality control; Electrical polarization; Silicon; P n junction; Defect detection
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.99876

Si pn junctions fabricated by photoresist masked As(+) implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning tunneling microscope (STM). Using the CITS, a specific bias was chosen to define n-type or p-type areas according to whether or not current flowed. The pn junctions could be easily identified from the current image at this bias and in the STM topographic image. It also proved possible to find processing faults related to implantation. The STM images also identified the structure (corrugations) near the junctions, associated with volume expansion caused by implantation and annealing. (Author)