Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

Superconducting thin films of Dy-Ba-Cu-O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low-temperature substrate kept below 600 C foll...

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Bibliographic Details
Published in:	Applied physics letters Vol. 53; no. 5; pp. 441 - 443
Main Authors:	SPAH, R. J, HESS, H. F, STORMER, H. L, WHITE, A. E, SHORT, K. T
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 01-08-1988
Subjects:	Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Vacuum deposition Crystal growth Support Molecular beam condensation Transition metal Compounds Glow discharge Barium Copper Dysprosium Oxides Mixed Lanthanide Compounds Experimental study High temperature superconductor Inorganic compound Thin film
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Summary:	Superconducting thin films of Dy-Ba-Cu-O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low-temperature substrate kept below 600 C followed by an in situ anneal below 400 C. Thin films of Dy-Ba-Cu-O which were fully superconducting at 40 K have been fabricated by this in situ growth process. (Author)
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.100614