Study on wavelength distribution of high power laser diode array

Measured lateral wavelength distribution of LDA is presented, showing typically a V-type feature. Analyses indicate it is induced by bonding stress. A linear distributed stress model is proposed to explain the experimental results.

Saved in:

Bibliographic Details
Published in:	2009 14th OptoElectronics and Communications Conference pp. 1 - 2
Main Authors:	Shen Li, Xin Guofeng, Fang Zujie, Qu Ronghui
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-07-2009
Subjects:	Bonding Diode lasers Heat sinks Linear discriminant analysis Optical arrays Sea measurements Semiconductor laser arrays Thermal stresses Tin Wavelength measurement
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Measured lateral wavelength distribution of LDA is presented, showing typically a V-type feature. Analyses indicate it is induced by bonding stress. A linear distributed stress model is proposed to explain the experimental results.
ISBN:	1424441021 9781424441020
ISSN:	2166-8884 2166-8892
DOI:	10.1109/OECC.2009.5217098