Optimized oxygen annealing process for Vth tuning of p-MOSFET with high-k/metal gate stacks

• Published in: 2010 Proceedings of the European Solid State Device Research Conference pp. 301 - 304
• Main Authors: Kawanago, T, Lee, Y, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T, Iwai, H
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2010
• Subjects: Annealing; Capacitance-voltage characteristics; Electrodes; High K dielectric materials; Logic gates; Metals; MOSFET circuits
• ISBN: 142446658X; 9781424466580
• ISSN: 1930-8876
• DOI: 10.1109/ESSDERC.2010.5618352

A demonstration of V FB /V th tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount of oxygen atoms has been controlled by optimized annealing temperature and the thickness of the gate electrode. The shift in V FB has been confirmed irrespective of gate dielectric materials and the thickness. The V th of pMOSFET can be controlled to positive direction by 520 mV without any EOT penalty. Once a shift in V FB /V th is obtained, the values are found to be stable even after following forming gas annealing.