A CMOS analog integrated circuit for pixel X-Ray detector

• Published in: Proceedings of the 2009 12th International Symposium on Integrated Circuits pp. 179 - 182
• Main Authors: Fitrio, D., Tjoa, S., Mohan, A., Veljanovski, R., Berry, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2009
• Subjects: Application specific integrated circuits; Application specifics integrated circuits; Cadmium compounds; charge sensing; CMOS; CMOS analog integrated circuits; operational amplifier; Pulse amplifiers; Pulse shaping methods; Sensor arrays; Signal design; X-ray detection; X-ray detectors; Zinc compounds
• ISBN: 9810824688; 9789810824686
• ISSN: 2325-0631

The fabricated analog application specific integrated circuit (ASIC) is a front-end circuit for multichannel pixel detector system. The designed ASIC provides signal amplification for a pixelated arrays of 1 mm and 200 ¿m pitch pixel detectors made from cadmium telluride (CdTe) and cadmium zinc telluride (CZT) detector. Both the detector and ASIC are combined to target future high intensity research applications for modern X-ray detector systems. The ASIC was fabricated in a 0.35 ¿m process by AustriaMicrosystems and consists of 32 channels, where each channel contains a charge-sensitive amplifier, a pulse shaper and two further stages of amplification providing an overall gain of 1 mV/KeV of photon energy in the 30-120 KeV energy range. The preamplifier and shaper circuit are designed for both electron and hole polarities of the input signals, so that it can be used as anode or cathode readout and this can be optimised via a common bias level control signal. The ASIC's shaper has been designed with a time constant of 100 ns to allow operation at photon rate events above 1 Million photons per pixel per second The design and characterisation of the readout chip will be discussed in this paper presenting both simulated and fabricated results from the chip.