Frequency dispersion in GaAs metal-semiconductor field-effect transistor transconductance

Frequency dispersion in GaAs metal-semiconductor field-effect transistor transconductance

A quasi-2D numerical model a GaAs metal-semiconductor field-effect transistor, which drops the conventional sharp-boundary approximation, is presented. Using this model, both the low- and the high-frequency transistor transconductance is calculated. It is shown that the transconductance shows marked...

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Bibliographic Details
Published in:2008 18th International Crimean Conference - Microwave & Telecommunication Technology pp. 143 - 144
Main Authors: Prokhorov, E.F., Gorev, N.B., Kodzhespirova, I.F., Privalov, E.N.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2008
Subjects:
Electronic mail
FETs
Frequency
Gallium arsenide
Intrusion detection
MESFETs
Metals industry
Substrates
Threshold voltage
Transconductance
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Summary:A quasi-2D numerical model a GaAs metal-semiconductor field-effect transistor, which drops the conventional sharp-boundary approximation, is presented. Using this model, both the low- and the high-frequency transistor transconductance is calculated. It is shown that the transconductance shows marked frequency dispersion in the drain current saturation region, which may have a significant impact on the small-signal voltage gain of a transistor amplifier.
ISBN:9663351667
9789663351667
DOI:10.1109/CRMICO.2008.4676324