Recent progress in SiC DMOSFETs and JBS diodes at Cree

• Published in: 2008 34th Annual Conference of IEEE Industrial Electronics pp. 2885 - 2890
• Main Authors: Callanan, R.J., Agarwal, A., Burk, A., Das, M., Hull, B., Husna, F., Powell, A., Richmond, J., Sei-Hyung Ryu, Qingchun Zhang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-11-2008
• Subjects: Drives; Frequency conversion; Industrial electronics; Insulated gate bipolar transistors; Inverters; Medium voltage; MOSFET circuits; Schottky diodes; Silicon carbide; Temperature
• ISBN: 9781424417674; 1424417678
• ISSN: 1553-572X
• DOI: 10.1109/IECON.2008.4758417

This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV and 10 kV SiC DMOSFETs have been produced with die areas greater than 0.64 cm 2 . SiC JBS diode dies also rated at 1.2 kV and 10 kV have been produced with die areas exceeding 1.5 cm 2 . These results demonstrate that SiC power devices provide a significant leap forward in performance for industrial electronics applications. At 1.2 kV, SiC DMOSFETs offer a reduction of power loss of greater than 50 % with dies less than half the size when compared to silicon (Si) IGBTs. The SiC JBS diodes offer significant reductions in reverse recovery losses. At 10 kV, there are no Si devices that can compete with SiC on a single device basis. Data on 1.2 kV and 10 kV devices are presented along with future trends.