A new ultra-fast charge pumping measurement technique for NIT characterization without relaxation

In this work, we revisit the charge pumping technique (Heremans et al., 1989 ) and use a novel measurement system to characterize the charge trapping in SiC MOSFETs. The focus in this paper will be on describing the method used and providing a preliminary analysis of the experimental data collected.

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Bibliographic Details
Published in:	2007 International Semiconductor Device Research Symposium pp. 1 - 2
Main Authors:	Habersat, D.B., Gurfinkel, M., Horst, J., Kim, J., Xiong, H.D., Cheung, K., Suehle, J.S., Lelis, A.J., Bernstein, J.B., Shapira, Y.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-12-2007
Subjects:	Charge measurement Charge pumps Circuits Current measurement Educational institutions Measurement techniques Pulse measurements Silicon carbide Stress measurement Time measurement
Online Access:	Get full text
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Description
Summary:	In this work, we revisit the charge pumping technique (Heremans et al., 1989 ) and use a novel measurement system to characterize the charge trapping in SiC MOSFETs. The focus in this paper will be on describing the method used and providing a preliminary analysis of the experimental data collected.
ISBN:	9781424418916 1424418917
DOI:	10.1109/ISDRS.2007.4422384