Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive)

• Published in: 2009 Symposium on VLSI Technology pp. 186 - 187
• Main Authors: Jiyoung Kim, Hong, A.J., Sung Min Kim, Song, E.B., Jeung Hun Park, Jeonghee Han, Siyoung Choi, Deahyun Jang, Joo -Tae Moon, Wang, K.L.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2009
• Subjects: Annealing; Consumer electronics; Electrodes; Fabrication; Filling; Hydrogen; Materials science and technology; Moon; Semiconductor films; Solid state circuits
• ISBN: 9781424433087; 1424433088
• ISSN: 0743-1562

A novel 3-D NAND flash memory device, VSAT (Vertical-Stacked-Array-Transistor), has successfully been achieved. The VSAT was realized through a cost-effective and straightforward process called PIPE (planarized-Integration-on-the-same-plane). The VSAT combined with PIPE forms a unique 3-D vertical integration method that may be exploited for ultra-high-density Flash memory chip and solid-state-drive (SSD) applications. The off-current level in the polysilicon-channel transistor dramatically decreases by five orders of magnitude by using an ultra-thin body of 20 nm thick and a double-gate-in-series structure. In addition, hydrogen annealing improves the subthreshold swing and the mobility of the polysilicon-channel transistor.