Silicon-carbide MOSFET based synchronous DC/DC boost converter

• Published in: 2017 International Electrical Engineering Congress (iEECON) pp. 1 - 4
• Main Authors: Xiancheng Zheng, Zaman, Haider, Xiaohua Wu, Husan Ali, Khan, Shahbaz
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-03-2017
• Subjects: Aerospace electronics; Aircraft; MOSFET; Peak Current-mode Control (PCMC); Silicon; Silicon carbide; Silicon Carbide (SiC); Switching frequency; Synchoronous Boost Converter (SBC); Voltage control
• DOI: 10.1109/IEECON.2017.8075800

This paper presents a high efficiency synchronous dc-dc boost converter. The Silicon-Carbide (SiC) MOSFET belongs to the family of wide-bandgap devices and has the inherit property of lower switching and conduction losses as compared to the silicon counter part. The employement of SiC MOSFETs enables the operation of converter at higher switching frequencies, significantly reducing the inductive and capaictive filter values. The switching frequency of the proposed converter is 250kHz. The peak-current mode control (PCMC) is employed for ensuring the load voltage regulation under steady state and for mitigating the effects of source and load transients. The 200W protype for 24V to 28V step up operation has been developed to validate the proposed system. The results in steady state and transient state are presented which depicts the satisfactory performance of the proposed converter.