GaAs PHEMT Power Amplifier MMIC with Integrated ESD Protection for Full SMD 38-GHz Radio Chipset

• Published in: 2007 IEEE Compound Semiconductor Integrated Circuits Symposium pp. 1 - 4
• Main Authors: Bessemoulin, A., Mahon, S.J., Harvey, J.T., Richardson, D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-10-2007
• Subjects: Electrostatic discharge; Gallium arsenide; Low-noise amplifiers; MMICs; Packaging; Performance gain; PHEMTs; Power amplifiers; Protection; Radiofrequency amplifiers
• ISBN: 1424410223; 9781424410224
• ISSN: 1550-8781; 2374-8443
• DOI: 10.1109/CSICS07.2007.24

The performance of a compact 38-GHz linear power amplifier MMIC' designed for use in SMD package is presented. The amplifier is fabricated with a 6-inch 0.15 mum GaAs low-noise PHEMT technology, and features on-chip ESD protection with input short-circuit stub, robust capacitors at RF ports and high current diode arrays. While occupying a chip area of only 3.5 mm 2 , at 5 V and 600 mA, this 4-stage amplifier achieves a small signal gain of more than 26 dB over the 35-to 42 GHz frequency band, 26-dBm output power in saturation, and excellent intermodulation performance with up to 37-dBm OIP 3 when backed-off. Finally, the PA MMIC exhibits excellent performance in packaged form as well, with 25-dB linear gain in the 35-42 GHz band and output referred intercept point of more than to 35 dBm.