Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

AlGaN/GaN HEMTs with a gate length of 0.125 μm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradatio...

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Bibliographic Details
Published in:2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
Main Authors: Douglas, E. A., Pearton, S. J., Ren, F., Poling, B., Heller, E., Via, D.
Format: Conference Proceeding
Language:English
Published: IEEE 01-10-2011
Subjects:
Degradation
Gallium nitride
HEMTs
Logic gates
MODFETs
Radio frequency
Stress
Online Access:Get full text
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Summary:AlGaN/GaN HEMTs with a gate length of 0.125 μm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradation was observed for all three bias conditions. Electroluminescence indicates localized points of failure along the channel length, and micro- photoluminescence indicates an increase in non- radiative trap formation in regions of failure.
ISBN:9781612847115
1612847110
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2011.6062458