Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

The importance of optimizing the millisecond annealing (MSA) temperature for Pt-doped NiSi (<inline-formula> <tex-math notation="LaTeX">{\mathrm {Ni}}_{{1}-{x}} </tex-math></inline-formula>Pt x Si) contact formation was highlighted by implementing and characterizing...

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Bibliographic Details

Published in:	IEEE transactions on electron devices Vol. 66; no. 1; pp. 389 - 394
Main Authors:	Kim, Jinbum, Park, Taejin, Lee, Seounghoon, Lee, Siyoung, Kim, Chulsung, Hyun, Sangjin, Kim, Yihwan, Hwang, Kihyun, Kim, Hyoungsub
Format:	Journal Article
Language:	English
Published:	IEEE 01-01-2019
Subjects:	Annealing Defects junction leakage current Junctions Leakage currents millisecond annealing (MSA) Ni silicide Nickel alloys Silicides Silicon static randomaccess memory (SRAM)
Online Access:	Get full text
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