Design of stable 700V Lateral MOSFET for new generation, low-cost off-line SMPS

Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to e...

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Published in:2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 269 - 272
Main Authors: Banerjee, S, Parthasarathy, V, Manley, M
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2010
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Abstract Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to earlier generation products.
AbstractList Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to earlier generation products.
Author Manley, M
Parthasarathy, V
Banerjee, S
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  surname: Manley
  fullname: Manley, M
  organization: Power Integrations, San Jose, CA, USA
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Snippet Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime...
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StartPage 269
SubjectTerms BiCMOS integrated circuits
Design optimization
MOSFET circuits
Output feedback
Power generation
Power MOSFET
Pulse width modulation
Stability
Switched-mode power supply
Topology
Title Design of stable 700V Lateral MOSFET for new generation, low-cost off-line SMPS
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