Design of stable 700V Lateral MOSFET for new generation, low-cost off-line SMPS
Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to e...
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Published in: | 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 269 - 272 |
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Main Authors: | , , |
Format: | Conference Proceeding |
Language: | English |
Published: |
IEEE
01-06-2010
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Subjects: | |
Online Access: | Get full text |
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Summary: | Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to earlier generation products. |
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ISBN: | 1424477182 9781424477180 |
ISSN: | 1063-6854 1946-0201 |