Capacitance matching effects in negative capacitnace field effect transistor

Capacitance matching effects in negative capacitnace field effect transistor

Negative capacitance effects are experimentally observed in p-type bulk MOSFET with PZT ferroelectric capacitor. The average subthreshold slope of 45 mV/decade at 300 K is experimentally demonstrated with 10 5 on-/off-current ratio and minimal hysteresis window of 0.2 V, albeit at relatively high dr...

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Bibliographic Details
Published in:2016 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 174 - 175
Main Authors: Jaesung Jo, Khan, Asif Islam, Karam Cho, Sangheon Oh, Salahuddin, Sayeef, Changhwan Shin
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2016
Subjects:
Capacitance
Capacitance measurement
Capacitors
Logic gates
MOSFET
Silicon
Online Access:Get full text
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Summary:Negative capacitance effects are experimentally observed in p-type bulk MOSFET with PZT ferroelectric capacitor. The average subthreshold slope of 45 mV/decade at 300 K is experimentally demonstrated with 10 5 on-/off-current ratio and minimal hysteresis window of 0.2 V, albeit at relatively high drain voltage. Furthermore, a change in the nature of hysteresis was observed with drain voltage, which provides insight into the issues of capacitance matching between the MOSFET and the ferroelectric capacitor.
DOI:10.1109/SNW.2016.7578038