Suppresion of Floating Body Effect in Low Leakage FD-SOI with Fluorine Implantation Technology

Suppresion of Floating Body Effect in Low Leakage FD-SOI with Fluorine Implantation Technology

In this paper, we report a new method of suppressing the floating body effect (FBE) in low leakage FD-SOI transistor. We applied the fluorine implantation for NFET to supress the floating body effect, keeping low leakage current. The Vt shift of ~300mV is observed and drain induced barrier lowering...

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Bibliographic Details
Published in:2006 IEEE international SOI Conferencee Proceedings pp. 97 - 98
Main Authors: Domae, Y., Miura, N., Okamura, T., Kumar, A., Ida, J.
Format: Conference Proceeding
Language:English
Published: IEEE 01-10-2006
Subjects:
Annealing
Capacitance-voltage characteristics
Degradation
Dielectric films
Fabrication
High K dielectric materials
High-K gate dielectrics
Leakage current
Research and development
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Summary:In this paper, we report a new method of suppressing the floating body effect (FBE) in low leakage FD-SOI transistor. We applied the fluorine implantation for NFET to supress the floating body effect, keeping low leakage current. The Vt shift of ~300mV is observed and drain induced barrier lowering (DIBL) improves ~100mV/V for L=0.14mum
ISBN:9781424402892
1424402891
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2006.284451