DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT structures with Al2O3 gate dielectric prepared by various techniques

• Published in: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) pp. 9 - 12
• Main Authors: Gucmann, F., Gregusova, D., Valik, L., Tapajna, M., Hascik, S., Husekova, K., Frohlich, K., Pohorelec, O., Kuzmik, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-11-2016
• Subjects: Aluminum gallium nitride; HEMTs; Logic gates; MODFETs; Photonics; Wide band gap semiconductors
• DOI: 10.1109/ASDAM.2016.7805883

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) represent an important technology for future high-efficient power and RF electronics. Due to oxide/semiconductor interface issues, fabrication of reliable MOS gate stack is still challenging, however. In this work we investigated the influence of gate oxide preparation technique to static and pulsed-mode operation of Al 2 O 3 /GaN/AlGaN/GaN MOS-HEMTs. Devices with gate oxide prepared by high-temperature MOCVD and low-temperature ALD using water vapour or ozone as oxidants are compared in terms of dynamic on-state resistance (R DSon ), threshold voltage shift (ΔV th ), and Al 2 O 3 /GaN interface charge density (N it ).