Temperature dependence of electrical characteristics on pn junction power diodes irradiated by X-ray

The purpose of this work is to study the effect of X-ray irradiation on pn junction power diode. The diodes were designed and fabricated using standard CMOS technology. Irradiation with exposure energy of 70 keV and various exposure times (5, 55, and 205 seconds) were applied on the diodes. The temp...

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Bibliographic Details

Published in:	2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology pp. 1 - 4
Main Authors:	Sundarasaradula, Y., Sodhgam, P., Amporn, Poyai, Klunngien, N., Titiroongruang, W.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2012
Subjects:	I-V characteristics ideality factor Junctions pn junction diode Radiation effects Resistance Semiconductor diodes series resistance Temperature Temperature dependence Temperature measurement X-ray irradiation
Online Access:	Get full text
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