Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping

• Published in: International Electron Devices Meeting 1991 [Technical Digest] pp. 495 - 498
• Main Authors: van Dort, M.J., Woerlee, P.H., Walker, A.J., Juffermans, C.A.H., Lifka, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1991
• Subjects: Doping; Electrons; Laboratories; MOS devices; MOSFETs; Performance evaluation; Semiconductor device modeling; Semiconductor process modeling; Temperature; Threshold voltage
• ISBN: 0780302435; 9780780302433
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.1991.235348

The impact of high doping levels on the threshold voltage of MOS transistors is discussed. The threshold voltage of surface channel devices is shown to be affected through the quantum-mechanical splitting of the energy levels in the conduction band. A significant threshold voltage shift is reported at room temperature for deep-submicron n-channel devices and needs to be taken into account in the design of the devices. A simple analytical model to account for this effect is proposed.< >