Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor

As the dimension of VLSI technology approaches the nanometer scale, various fabrication methods have been proposed to establish one-dimensional (1-D) electron confinement. In this work, we have fabricated a gate-all-around silicon quantum wire transistor on an SO1 wafer using electron beam lithograp...

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Bibliographic Details

Published in:	Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) pp. 150 - 151
Main Authors:	Minkyu Je, Sangyeon Han, Ilgweon Kim, Hyungcheol Shin
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1998
Subjects:	Electrons Etching Fabrication Lithography MOSFETs Numerical analysis Silicon Temperature Voltage Wire
Online Access:	Get full text
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