Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor
As the dimension of VLSI technology approaches the nanometer scale, various fabrication methods have been proposed to establish one-dimensional (1-D) electron confinement. In this work, we have fabricated a gate-all-around silicon quantum wire transistor on an SO1 wafer using electron beam lithograp...
Saved in:
| Published in: | Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) pp. 150 - 151 |
|---|---|
| Main Authors: | , , , |
| Format: | Conference Proceeding |
| Language: | English |
| Published: |
IEEE
1998
|
| Subjects: | |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract | As the dimension of VLSI technology approaches the nanometer scale, various fabrication methods have been proposed to establish one-dimensional (1-D) electron confinement. In this work, we have fabricated a gate-all-around silicon quantum wire transistor on an SO1 wafer using electron beam lithography, anisotropic dry etching, and thermal oxidation. The 1-D transport properties of the device has been examined and studied. |
|---|---|
| AbstractList | As the dimension of VLSI technology approaches the nanometer scale, various fabrication methods have been proposed to establish one-dimensional (1-D) electron confinement. In this work, we have fabricated a gate-all-around silicon quantum wire transistor on an SO1 wafer using electron beam lithography, anisotropic dry etching, and thermal oxidation. The 1-D transport properties of the device has been examined and studied. |
| Author | Hyungcheol Shin Ilgweon Kim Minkyu Je Sangyeon Han |
| Author_xml | – sequence: 1 surname: Minkyu Je fullname: Minkyu Je organization: KAIST – sequence: 2 surname: Sangyeon Han fullname: Sangyeon Han – sequence: 3 surname: Ilgweon Kim fullname: Ilgweon Kim – sequence: 4 surname: Hyungcheol Shin fullname: Hyungcheol Shin |
| BookMark | eNotj09LwzAYhwMqqLN38ZQv0PlmSfomx1J0m0yHWPA40vyBSJdK2h700yvO3-U5PQ_8rsl5GpIn5JbBkjHQ99vnl2bJtFZL5ABMnZFCoxKag2JccXZJinH8gN9xLSXIK_L0Ops0xW_vaDMkN9vJJOvpPtCars3ky7rvyzoPc3L0LfbRDon-KfORvsfsaZtNGuM4DfmGXATTj77454K0jw9tsyl3-_W2qXdlVHoqBQsyCB5AWZBcO_DdCivhBBMVdkYpEyzYFdOuQtSCG2SdqVBqRIcKFV-Qu1M2eu8PnzkeTf46nP7yH1sjS5I |
| ContentType | Conference Proceeding |
| DBID | 6IE 6IL CBEJK RIE RIL |
| DOI | 10.1109/IMNC.1998.730018 |
| DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Electronic Library Online IEEE Proceedings Order Plans (POP All) 1998-Present |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EndPage | 151 |
| ExternalDocumentID | 730018 |
| Genre | orig-research |
| GroupedDBID | 6IE 6IK 6IL AAJGR ACGHX ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK IERZE OCL RIE RIL |
| ID | FETCH-LOGICAL-i89t-41f5f43f08c0539d0eb2764d41467ba88afc0c219d677943a71ba675977d78783 |
| IEDL.DBID | RIE |
| ISBN | 9784930813831 4930813832 |
| IngestDate | Wed Jun 26 19:26:08 EDT 2024 |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-i89t-41f5f43f08c0539d0eb2764d41467ba88afc0c219d677943a71ba675977d78783 |
| PageCount | 2 |
| ParticipantIDs | ieee_primary_730018 |
| PublicationCentury | 1900 |
| PublicationDate | 19980000 |
| PublicationDateYYYYMMDD | 1998-01-01 |
| PublicationDate_xml | – year: 1998 text: 19980000 |
| PublicationDecade | 1990 |
| PublicationTitle | Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) |
| PublicationTitleAbbrev | IMNC |
| PublicationYear | 1998 |
| Publisher | IEEE |
| Publisher_xml | – name: IEEE |
| SSID | ssj0000395505 |
| Score | 1.2767454 |
| Snippet | As the dimension of VLSI technology approaches the nanometer scale, various fabrication methods have been proposed to establish one-dimensional (1-D) electron... |
| SourceID | ieee |
| SourceType | Publisher |
| StartPage | 150 |
| SubjectTerms | Electrons Etching Fabrication Lithography MOSFETs Numerical analysis Silicon Temperature Voltage Wire |
| Title | Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor |
| URI | https://ieeexplore.ieee.org/document/730018 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8JAEJ4IiYleVMT4zh68Lmzp0u4eCWLQRNTAwRtpd2cTEiwG6MVf7-xWUBMv3tom2zQz3Z355vENwA0mMUpyBHhCyJrLJDacYLPk1mUy0pjrJCTah-N09KpuB3LDsx16YRAxFJ9hy1-GXL5dmNKHytqeWz1SNailWlWtWttwioi197UJd0kdk5kj4NWp-HW299EmSyl0-_5x1PeNeqpVvfPXbJVgWu4O_vVRh9D8btFjz1vjcwQ7WDRg_we7YAN2Q3WnWR3Dw0tJApx9oGW03DO8el2zJ8d6zIfPeG8-572ln7DExrM5_RwFC0vKN-bLY1mwaIFQpAmTu8GkP-RfQxT4TOk1l5HrOhk7oQxtN20FIek0kVb6EzLPlMqcEYaOLZuknisuS6M8IxBBbqGlvaziE6gXiwJPgZEiuwaFNKRF6USuIpd1sJsimiSPMTuDhpfO9L2iyZhWgjn_8-kF7FXNfT6WcQn19bLEK6itbHkd9PoJi7udiw |
| link.rule.ids | 310,311,782,786,791,792,798,4054,4055,27934,54767 |
| linkProvider | IEEE |
| linkToHtml | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8JAEJ4IxqgXFTG-3YPXhZYu7fZIEAIKqIGDN9LuziYkWAzQi7_e2a2iJl68tU22aWa6O_PN4xuAWwwDFOQI8JCQNRdhoDjBZsG1SYQfYxqHLtHeG0ejF3nXEV88264XBhFd8RnW7KXL5euFym2orG651X1Zgu2miMKoaNbaBFS8ILbeNiEvEQdk6Ah6NQqGnc29_5Wn9OJ6fzhq21Y9WSve-mu6ijMu3YN_fdYhVL-b9NjTxvwcwRZmFdj_wS9YgR1X36lWx3D_nJMIZ--oGS23HK9W2-zRsBazATTems95a2lnLLHxbE6_R8bckvyV2QJZ5myaoxSpwqTbmbR7_HOMAp_JeM2Fb5pGBMaTijZcrD3C0lEotLBnZJpImRjlKTq4dBhZtrgk8tOEYAQ5hpp2swxOoJwtMjwFRqpsKvSEIj0K46XSN0kDmxGiCtMAkzOoWOlM3wqijGkhmPM_n97Abm8yHEwH_dHDBewVrX42snEJ5fUyxysorXR-7XT8AQu6oNw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=Digest+of+Papers.+Microprocesses+and+Nanotechnology%2798.+198+International+Microprocesses+and+Nanotechnology+Conference+%28Cat.+No.98EX135%29&rft.atitle=Quantized+Conductance+Of+A+Gate-All-Around+Silicon+Quantum+Wire+Transistor&rft.au=Minkyu+Je&rft.au=Sangyeon+Han&rft.au=Ilgweon+Kim&rft.au=Hyungcheol+Shin&rft.date=1998-01-01&rft.pub=IEEE&rft.isbn=9784930813831&rft.spage=150&rft.epage=151&rft_id=info:doi/10.1109%2FIMNC.1998.730018&rft.externalDocID=730018 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9784930813831/lc.gif&client=summon&freeimage=true |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9784930813831/mc.gif&client=summon&freeimage=true |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9784930813831/sc.gif&client=summon&freeimage=true |