Carrier transport in semiconductor magnetic field sensors

Carrier transport in semiconductor magnetic field sensors

We present the first two-dimensional numerical solutions of the coupled partial differential equations governing carrier drift, diffusion, generation, recombination and electric potential in the bulk of a semiconductor material in the presence of a magnetic field. Our solutions were obtained for a u...

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Bibliographic Details
Published in:1983 International Electron Devices Meeting pp. 635 - 638
Main Authors: Andor, L., Baltes, H.P., Nathan, A., Schmidt-Weinmar, H.G.
Format: Conference Proceeding
Language:English
Published: IRE 1983
Subjects:
Boundary conditions
Couplings
Electric potential
Magnetic fields
Magnetic sensors
Ohmic contacts
Partial differential equations
Radiative recombination
Semiconductor materials
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Summary:We present the first two-dimensional numerical solutions of the coupled partial differential equations governing carrier drift, diffusion, generation, recombination and electric potential in the bulk of a semiconductor material in the presence of a magnetic field. Our solutions were obtained for a uniformly doped, quadratic semiconductor slab subject to boundary conditions which arise from two ohmic contacts supplying the device current.
DOI:10.1109/IEDM.1983.190587