Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serv...

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Bibliographic Details
Published in:Proceedings of IEEE International Electron Devices Meeting pp. 739 - 742
Main Authors: Wei, H.F., Kalkhoran, N.M., Namavar, F., Chung, J.E.
Format: Conference Proceeding
Language:English
Published: IEEE 1993
Subjects:
Annealing
Boron
Charge carrier lifetime
Degradation
Fabrication
Implants
Low voltage
MOSFET circuits
Oxidation
Temperature
Online Access:Get full text
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Summary:This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.< >
ISBN:0780314506
9780780314504
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347207