Damage from stimulated emission in optically pumped GaInN multiple quantum wells

Damage from stimulated emission in optically pumped GaInN multiple quantum wells

Summary form only given. Optically induced damage in GaInN multiple quantum wells was observed during the course of gain measurements using the variable excitation length method. Stimulated emission intensity from the doped sample was measured as a function of time, and damage patterns deduced.

Saved in:
Bibliographic Details
Published in:Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178) p. 310
Main Authors: Cohen, D.A., Margalith, T., Abare, A.C., Mack, M.P., Keller, S., Coldren, L.A., DenBaars, S.P., Clarke, D.R.
Format: Conference Proceeding
Language:English
Published: IEEE 1998
Subjects:
Degradation
Doping profiles
Gallium nitride
Optical buffering
Optical pumping
Optical waveguides
Pump lasers
Quantum computing
Quantum well lasers
Stimulated emission
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Summary form only given. Optically induced damage in GaInN multiple quantum wells was observed during the course of gain measurements using the variable excitation length method. Stimulated emission intensity from the doped sample was measured as a function of time, and damage patterns deduced.
ISBN:1557523390
DOI:10.1109/CLEO.1998.676208