Improvement on the luminescence efficiency, electroluminescence linewidth and transport properties of ZnCdSe/ZnCdMgSe Quantum Cascade structures

We present electroluminescence from ZnCdSe/ZnCdMgSe Quantum Cascade structures, with 3 times higher luminescence efficiency, 30% narrower electroluminescence linewidths than our first demonstration. The measured turn-on voltage matches with the calculated value.

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Bibliographic Details
Published in:	CLEO/QELS: 2010 Laser Science to Photonic Applications pp. 1 - 2
Main Authors:	Yu Yao, Charles, William O, Franz, Kale J, Aidong Shen, Tamargo, Maria C, Gmachl, Claire F
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2010
Subjects:	(140.3070) Infrared and far-infrared lasers (140.5965) Semiconductor lasers Electroluminescence Electrons Laser transitions Luminescence Optical coupling quantum cascade Quantum cascade lasers Quantum well lasers Semiconductor lasers Voltage X-ray scattering
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Description
Summary:	We present electroluminescence from ZnCdSe/ZnCdMgSe Quantum Cascade structures, with 3 times higher luminescence efficiency, 30% narrower electroluminescence linewidths than our first demonstration. The measured turn-on voltage matches with the calculated value.
DOI:	10.1364/CLEO.2010.CTuE5