Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

A WSe2‐based vertical graphene‐transition metal dichalcogenide heterojunction barristor shows an unprecedented on‐current increase with decreasing temperature and an extremely high on/off‐current ratio of 5 × 107 at 180 K (3 × 104 at room temperature). These features originate from a trap‐assisted t...

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Bibliographic Details
Published in:	Advanced materials (Weinheim) Vol. 28; no. 26; pp. 5293 - 5299
Main Authors:	Shim, Jaewoo, Kim, Hyo Seok, Shim, Yoon Su, Kang, Dong-Ho, Park, Hyung-Youl, Lee, Jaehyeong, Jeon, Jaeho, Jung, Seong Jun, Song, Young Jae, Jung, Woo-Shik, Lee, Jaeho, Park, Seongjun, Kim, Jeehwan, Lee, Sungjoo, Kim, Yong-Hoon, Park, Jin-Hong
Format:	Journal Article
Language:	English
Published:	Germany Blackwell Publishing Ltd 01-07-2016
Subjects:	barristors graphene heterojunctions trap-assisted tunneling WSe2 trap-assisted tunneling WSe2 barristors heterojunctions graphene
Online Access:	Get full text
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Summary:	A WSe2‐based vertical graphene‐transition metal dichalcogenide heterojunction barristor shows an unprecedented on‐current increase with decreasing temperature and an extremely high on/off‐current ratio of 5 × 107 at 180 K (3 × 104 at room temperature). These features originate from a trap‐assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.
Bibliography:	Ministry of Science, ICT and Future Planning of Korea - No. 2015R1A2A2A01002965; No. 2013M3A6B1078881 ark:/67375/WNG-8GWZ71WP-9 istex:7BD61D9F33B1169B1E0541643CBF0603503B831B ArticleID:ADMA201506004 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201506004