Novel, gain-flattened L-band EDFA with ASE utilization with >40 nm 3 dB bandwidth

Novel, gain-flattened L-band EDFA with ASE utilization with >40 nm 3 dB bandwidth

A simple gain‐flattened L‐band erbium‐doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C‐band amplified spontaneous emission (ASE) to enhance L‐band gain performance. An L‐band flat gain range of 50 nm (1560–1610 nm) is achieved for use in wavelength‐division multiplexing (WDM) trans...

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Bibliographic Details
Published in:Microwave and optical technology letters Vol. 28; no. 6; pp. 399 - 402
Main Authors: Mahamd Adikan, F. R., Mahdi, M. A., Thirumeni, S., Poopalan, P., Dimyati, K., Ahmad, H.
Format: Journal Article
Language:English
Published: New York John Wiley & Sons, Inc 20-03-2001
Subjects:
erbium-doped fiber amplifier
gain-flattened
long band
optical amplifier
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Summary:A simple gain‐flattened L‐band erbium‐doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C‐band amplified spontaneous emission (ASE) to enhance L‐band gain performance. An L‐band flat gain range of 50 nm (1560–1610 nm) is achieved for use in wavelength‐division multiplexing (WDM) transmission systems. Gain flatness with a 3 dB gain discrepancy is obtained through manipulation of the pump power. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 399–402, 2001.
Bibliography:istex:8011F181A6D7813F4B5B37596149C4FDEBED103F
ark:/67375/WNG-1CF13RPX-4
ArticleID:MOP1053
ISSN:0895-2477
1098-2760
DOI:10.1002/1098-2760(20010320)28:6<399::AID-MOP1053>3.0.CO;2-S