High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for >40-gb/s optical receivers
We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors and coating. Optimization of the optical input waveguide was made using the method of the genetic algori...
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Published in: | IEEE photonics technology letters Vol. 16; no. 2; pp. 584 - 586 |
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Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
New York
IEEE
01-02-2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects: | |
Online Access: | Get full text |
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Summary: | We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors and coating. Optimization of the optical input waveguide was made using the method of the genetic algorithm associated with a beam propagation method. Optical fiber coupling to the PD is based on a diluted multimode waveguide allowing simple material epitaxial growth. The fabricated PDs exhibit simultaneously 0.76-A/W responsivity at 1.55 μm, >50-GHz bandwidth, and more than 22-mA average saturation photocurrent at 50 GHz. The light polarization dependence is less than 0.1 dB. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2003.821082 |