InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz

In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are...

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Bibliographic Details
Published in:	2023 18th European Microwave Integrated Circuits Conference (EuMIC) pp. 101 - 104
Main Authors:	Davy, N., Deng, M., Nodjiadjim, V., Mukherjee, C., Riet, M., Mismer, C., Ardouin, B., Maneux, C.
Format:	Conference Proceeding
Language:	English
Published:	European Microwave Association (EuMA) 18-09-2023
Subjects:	Analytical models Atmospheric measurements Calibration DH-HEMTs Double heterojunction bipolar transistor (DHBT) Indium Phosphide (InP) InP/InGaAs Microwave measurement Microwave theory and techniques Millimeter-wave On-wafer characterization Particle measurements
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Summary:	In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are modeled in order to understand how parasitic parameters are distributed and to propose subsequent improvements.
DOI:	10.23919/EuMIC58042.2023.10288849