Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observ...

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Bibliographic Details
Published in:2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) pp. 1 - 6
Main Authors: Driussi, F., Pilotto, A., De Belli, D., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Menk, R. H., Nichetti, C., Selmi, L., Steinhartova, T., Palestri, P.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2020
Subjects:
Absorption
Analytical models
Dark current
Potential energy
Sensitivity
Temperature dependence
Temperature measurement
Online Access:Get full text
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Summary:Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer.
ISSN:2158-1029
DOI:10.1109/ICMTS48187.2020.9107920